c-617 IRGB420UD2 i nsulated gate bipolar transistor with ultrafast soft recovery diode
c-618 parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 15 23 i c = 7.5a q ge gate - emitter charge (turn-on) ? 3.7 5.6 nc v cc = 400v q gc gate - collector charge (turn-on) ? 6.5 9.8 see fig. 8 t d(on) turn-on delay time ? 65 ? t j = 25c t r rise time ? 44 ? ns i c = 7.5a, v cc = 400v t d(off) turn-off delay time ? 140 210 v ge = 15v, r g = 50 w t f fall time ? 110 160 energy losses include "tail" and e on turn-on switching loss ? 0.25 ? diode reverse recovery. e off turn-off switching loss ? 0.25 ? mj see fig. 9, 10, 11, 18 e ts total switching loss ? 0.50 0.80 t d(on) turn-on delay time ? 60 ? t j = 150c, see fig. 9, 10, 11, 18 t r rise time ? 44 ? ns i c = 7.5a, v cc = 480v t d(off) turn-off delay time ? 230 ? v ge = 15v, r g = 50 w t f fall time ? 220 ? energy losses include "tail" and e ts total switching loss ? 0.8 ? mj diode reverse recovery. l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 330 ? v ge = 0v c oes output capacitance ? 47 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 5.9 ? ? = 1.0mhz t rr diode reverse recovery time ? 37 55 ns t j = 25c see fig. ? 55 90 t j = 125c 14 i f = 8.0a i rr diode peak reverse recovery current ? 3.5 5.0 a t j = 25c see fig. ? 4.5 8.0 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ? 65 138 nc t j = 25c see fig. ? 124 360 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 240 ? a/s t j = 25c see fig. during t b ? 210 ? t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 500 ? ? v v ge = 0v, i c = 250a d v (br)ces / d t j temp. coeff. of breakdown voltage ? 0.47 ? v/c v ge = 0v , i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.4 2.9 i c = 7.5a v ge = 15v ? 3.1 ? v i c = 14a see fig. 2, 5 ? 2.7 ? i c = 7.5a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temp. coeff. of threshold voltage ? -10 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 1.2 2.0 ? s v ce = 100v, i c = 7.5a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 500v ? ? 1700 v ge = 0v, v ce = 500v, t j = 150c v fm diode forward voltage drop ? 1.4 1.7 v i c = 8.0a see fig. 13 ? 1.3 1.6 i c = 8.0a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v IRGB420UD2
c-619 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics
c-620 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGB420UD2
c-621 IRGB420UD2
c-622 fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current
c-623
c-624
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